Design and construction of Z-scheme Bi2S3/nitrogen-doped graphene quantum dots: Boosted photoelectric conversion efficiency for high-performance photoelectrochemical aptasensing of sulfadimethoxine.

Affiliation

Key Laboratory of Modern Agriculture Equipment and Technology, School of Chemistry and Chemical Engineering, Jiangsu University, Zhenjiang 212013, PR China; Key Laboratory of Sensor Analysis of Tumor Marker, Ministry of Education, College of Chemistry and Molecular Engineering, Qingdao University of Science and Technology, Qingdao 266042, PR China. Electronic address: [Email]

Abstract

Rational design and fabrication of Z-scheme visible-light-driven photoactive materials have drawn much attention owing to their great potential in handling environment and energy crisis. In this work, Z-scheme Bi2S3/nitrogen-doped graphene quantum dots (NGQDs) with superior photoelectric conversion efficiency were designed and fabricated, which demonstrated enhanced photoactivity compared with Bi2S3 owing to the improved separation efficiency of photogenerated electron and hole pairs. The emphasis was put on designing Z-scheme Bi2S3/NGQDs, and then the mechanism of Z-scheme charge transfer mode was verified by the electron spin resonance (ESR) technique. On this basis, the proposed sensor exhibited a wide linear range of 0.1-120 nM and a detection limit of 0.03 nM (S/N = 3) for SDM, with high sensitivity (0.075 μA nM -1), good selectivity and stability. Moreover, the proposed PEC aptasensor using Bi2S3/NGQDs as the photoelectrode achieved sensitive and selective determination of sulfadimethoxine in milk samples. This work could provide some ideas for designing other Z-scheme photoactive species and insights into the charge transfer mechanism of Z-scheme. Furthermore, the promising applicability of PEC aptasensor using photoactive species could be extended to other accurate monitoring for contaminants.

Keywords

Bismuth sulfide,Nitrogen-doped graphene quantum dot,Photoelectrochemical aptasensor,Visible light,Z-scheme,

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