Cu-Doped ZnO Electronic Structure and Optical Properties Studied by First-Principles Calculations and Experiments.

Affiliation

Department of Mechanical Engineering, University of South Florida, Tampa, FL 33620, USA. [Email]

Abstract

The band structure, the density of states and optical absorption properties of Cu-doped ZnO were studied by the first-principles generalized gradient approximation plane-wave pseudopotential method based on density functional theory. For the Zn1-xCuxO (x = 0, x = 0.0278, x = 0.0417) original structure, geometric optimization and energy calculations were performed and compared with experimental results. With increasing Cu concentration, the band gap of the Zn₁-xCuxO decreased due to the shift of the conduction band. Since the impurity level was introduced after Cu doping, the conduction band was moved downwards. Additionally, it was shown that the insertion of a Cu atom leads to a red shift of the optical absorption edge, which was consistent with the experimental results.

Keywords

Cu doped ZnO,absorption spectrum,electronic structure,first-principles calculations,